Analysis of Turn-off Over Voltage on Thyristor Valve
نویسندگان
چکیده
منابع مشابه
Numerical modeling of gate turn-off thyristor using SICOS
This paper presents a numerical model of gate turn-off thyristors (GTO’s). The new concept of a controlledswitch realized by a controlled-current source is first introduced. Using this basic model, an equivalent circuit of the GTO is given. According to the characteristics of GTO given by manufacturers, the equations connected with all the parameters of the equivalent circuit are deduced. All o...
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Due to our limited knowledge about silicon carbide metal–oxide–semiconductor fieldeffect transistors (SiC MOSFETs), the theoretical analysis and change regularity in terms of the effects of temperature on their switching characteristics have not been fully characterized and understood. An analysis of variation in voltage (dVDS/dt) for SiC MOSFET during turn-on and turn-off has been performed th...
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Direct two-dimensional simulations are used to analyse the possibility of controlling the carrier concentration in the gated base of a GaAs optoelectronic thyristor, which operates in the regime of incomplete turn-o . Modelling results indicate that the number of carriers, light intensity, current distribution, and the position of the light-emitting region the gated base of the thyristor can e...
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This work is partially supported by US Office of Naval Research grant N00014-96-1-0926 Abstract The switching characteristics of 4H-SiC asymmetric GTO thyristors are studied and compared to Si based IGBTs, MCTs, and MOSFETs. Forward current density, turn-off time and forward blocking voltage parameters are matched for the various switching devices. From the measurements, the necessary parameter...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Power and Energy
سال: 1976
ISSN: 0385-4213,1348-8147
DOI: 10.1541/ieejpes1972.96.243